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2SK727 R100XP BA006 2SC2134 CY7C13 CXXXE R100XP T1214
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  Datasheet File OCR Text:
 30
20 8V Vgs =2V 15 Vgs =1.5V Vgs=5V
20
Id(A)
Id(A)
10
10
5 Vgs =1V
125C 25C
0 0 1 2 3 4 5 Vds(Volts) Figure 1: On-Regions Characteristics
0 0.0 0.5 1.0 1.5 2.0 2.5 Vgs(Volts) Figure 2: Transfer Characteristics
50
1.6 Id=6.5A
Rds(on)(m:)
40 Vgs =1.8V Vgs =2.5V 20 Vgs =4.5V 10 0 5 10 15 20
Normalize ON-Resistance
Vgs=1.8V Vgs=2.5V Vgs=4.5V
1.4
30
1.2
1.0
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Id(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
60 Id=6.5A 50
1E+01 1E+00 1E-01 125C
Rds(on)(m:)
40
Is(A)
1E-02 1E-03
30
125C
20 25C 10 0 2 4 6 8 Vgs(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-04 1E-05 0.0 0.2
25C
0.4
0.6
0.8
1.0
Vsd(Volts) Figure 6: Body-Diode Characteristics
5 Vds=10V 4
2000
Id=6.5A
Capacitance (pF)
1600 Ciss 1200 800 Crss 400 0 Coss
Vgs(Volts)
3
2
1
0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics
0
5
10
15
20
Vds(Volts) Figure 8: Capacitance Characteristics
100.0
Tj(max)=150C Ta=25C Rds(on) limited 10Ps 100Ps 1ms 0.1s 10ms
40 Tj(max)=150C Ta=25C 30
Id (Amps)
Power (W)
10.0
20
1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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